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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets ZVN0117TA D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 170 160 2 20 UNIT V mA A V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. BVDSS IGSS IDSS ID(on) RDS(on) 100 23 23 170 100 10 50 MAX. UNIT CONDITIONS. V nA A A Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) ID=10A, VGS=0V VGS= 15V, VDS=0V VDS=170 V, VGS=0 VDS=140 V, VGS=0V, T=50C(2) VDS=3V, VGS=3.3V VGS=3.3V,ID=100mA VGS=3V,ID=30mA mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% PAGE NO |
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